A REVIEW OF N TYPE GE

A Review Of N type Ge

≤ 0.fifteen) is epitaxially developed with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and after that the structure is cycled via oxidizing and annealing stages. A result of the preferential oxidation of Si about Ge [sixty eight], the initial Si1–According to these strategies, we have examined strains In a natural way ap

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